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IPW65R110CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

IPW65R110CFD

N-Channel MOSFET Transistor

?DESCRITION ?SuitableforresonantSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤110m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPW65R110CFD

絲?。?a target="_blank" title="Marking" href="/65f6110/marking.html">65F6110；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

IPW65R110CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

IPW65R110CFDA

20V-650V汽車級MOSFET; ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of delay times\n? Compliant to AEC Q101 standard\n\n優(yōu)勢:\n? Increased safety margin due to higher breakdown voltage\n? Reduced EMI appearance and easy to design in\n? Better light load efficiency\n? Lower switching losses\n? Higher switching frequency and/or higher duty cycle possible\n? High quality and reliability\n;

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provides also an integrated fast body diode.\n

IPW65R110CFD7

650V CoolMOS? CFD7 超結(jié) MOSFET 采用 TO-247 封裝，集成快速體二極管，是諧振高功率拓?fù)浣Y(jié)構(gòu)的理想之選; \n優(yōu)勢:\n? 出色的硬換向穩(wěn)健性\n? 總線電壓提高，為設(shè)計提供額外安全裕度\n? 可實現(xiàn)更高的功率密度\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中實現(xiàn)卓越輕載效率\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中提高滿載效率\n? 相較于市面上的替代產(chǎn)品，價格更具競爭力\n;

IPW65R110CFD7

絲印：65R110F7；Package：PG-TO247-3；650V CoolMOS? CFD7 SJ Power Device