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IPT65R040CFD7

絲?。?a target="_blank" title="Marking" href="/65r040f7/marking.html">65R040F7；Package：PG-HSOF-8；650V CoolMOSa CFD7 SJ Power Device

Features ?Ultra-fastbodydiode ?650Vbreakdownvoltage ?Best-in-classRDS(on) ?Reducedswitchinglosses ?LowRDS(on)dependencyovertemperature Benefits ?Excellenthardcommutationruggedness ?Extrasafetymarginfordesignswithincreasedbusvoltage ?Enablingincreasedpowe

IPT65R040CFD7

The 650 V CoolMOS? CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies; \n優(yōu)勢:\n? Excellent hard-commutation ruggedness\n? Extra safety margin for designs with increased bus voltage\n? Enabling increased power density\n? Outstanding light-load efficiency in industrial SMPS applications\n? Improved full-load efficiency in industrial SMPS applications\n? Price competitiveness compared to alternative offerings in the market\n;

IPT65R040CFD7XTMA1

Package：8-PowerSFN；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 650V 8HSOF

IPDQ65R040CFD7

650VCoolMOSaCFD7SJPowerDevice

Features ?Ultra-fastbodydiode ?650Vbreakdownvoltage ?Best-in-classRDS(on) ?Reducedswitchinglosses ?LowRDS(on)dependencyovertemperature Benefits ?Excellenthardcommutationruggedness ?Extrasafetymarginfordesignswithincreasedbusvoltage ?Enablingincreasedpowe

IPDQ65R040CFD7A

MOSFET650VCoolMOSaCFD7ASJPowerDevice

Features ?Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr ?LowestFOMRDS(on)*QgandRDS(on)*Eoss ?100%avalanchetested ?Best-in-classRDS(on)inSMDandTHDpackages Benefits ?Lowerswitchinglossesenablinghigh

IPQC65R040CFD7A

MOSFET650VCoolMOSaCFD7ASJPowerDevice

Features ?Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr ?LowestFOMRDS(on)*QgandRDS(on)*Eoss ?100%avalanchetested ?Best-in-classRDS(on)inSMDandTHDpackages Benefits ?Lowerswitchinglossesenablinghigh