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IPP65R110CFD

Marking:65F6110;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R110CFD

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.11? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP65R110CFD

500V-900V CoolMOS? N-Channel Power MOSFET; ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢:\n? Low switching losses due to low Qrr at repetitive commutation on body diode\n? Self limiting di/dt and dv/dt\n? Low Qoss\n? Reduced turn on and turn of delay times\n? Outstanding CoolMOS? quality\n;

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R110CFD7

Marking:65R110F7;Package:PG-TO220-3;650V CoolMOSa CFD7 SJ Power Device

Features ?Ultra-fastbodydiode ?650Vbreakdownvoltage ?Best-in-classRDS(on) ?Reducedswitchinglosses ?LowRDS(dependencyovertemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R110CFDA

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R110CFDA

20V-650V汽車級MOSFET; ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of delay times\n? Compliant to AEC Q101 standard\n\n優(yōu)勢:\n? Increased safety margin due to higher breakdown voltage\n? Reduced EMI appearance and easy to design in\n? Better light load efficiency\n? Lower switching losses\n? Higher switching frequency and/or higher duty cycle possible\n? High quality and reliability\n;

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provides also an integrated fast body diode.\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R110CFD7

650V CoolMOS? CFD7 超結(jié) MOSFET 采用 TO-247 封裝,集成快速體二極管,是諧振高功率拓?fù)浣Y(jié)構(gòu)的理想之選; \n優(yōu)勢:\n? 出色的硬換向穩(wěn)健性\n? 總線電壓提高,為設(shè)計提供額外安全裕度\n? 可實現(xiàn)更高的功率密度\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中實現(xiàn)卓越輕載效率\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中提高滿載效率\n? 相較于市面上的替代產(chǎn)品,價格更具競爭力\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

技術(shù)參數(shù)

  • OPN:

    IPP65R110CFDXKSA1/IPP65R110CFDXKSA2

  • Qualification:

    Non-Automotive

  • Package name:

    PG-TO220-3/PG-TO220-3

  • VDS max:

    650 V

  • RDS (on) @10V max:

    110 m?

  • ID @25°C max:

    31.2 A

  • QG typ @10V:

    118 nC

  • Special Features:

    fast recovery diode

  • Polarity:

    N

  • Operating Temperature min:

    -55 °C

  • VGS(th) min:

    3.5 V

  • VGS(th) max:

    4.5 V

  • Technology:

    CoolMOS? CFD2

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
23+
TO-220
75000
只做原裝 !全系列供應(yīng)可長期供貨穩(wěn)定價格優(yōu)勢!
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
Infineon(英飛凌)
24+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
Infineon(英飛凌)
23+
25900
新到現(xiàn)貨,只有原裝
詢價
INFINEON/英飛凌
20+
TO-220
1000
進(jìn)口原裝假一賠十支持含稅
詢價
INFINEON
2016+
TO-220
6989
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
詢價
INFINEON/英飛凌
2020+
TO220
3300
全新原裝現(xiàn)貨,一片也是批量價。
詢價
INFINOEN
24+
TO220-3
90000
一級代理進(jìn)口原裝現(xiàn)貨、假一罰十價格合理
詢價
更多IPP65R110CFD供應(yīng)商 更新時間2025-7-27 16:20:00