首頁(yè) >IPP60R520C6>規(guī)格書(shū)列表
零件型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IPP60R520C6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP60R520C6 | 絲?。?a target="_blank" title="Marking" href="/6r520c6/marking.html">6R520C6;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSTMC6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffer | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPP60R520C6 | 500V-900V CoolMOS? N-Channel Power MOSFET; ? 易于控制開(kāi)關(guān)行為\n? 由于非常低的品質(zhì)因數(shù)(R DS(ON)*Q g)和E oss),因此損耗極低\n? 非常高的換流堅(jiān)固性\n? 使用簡(jiǎn)便\n? 與 C3 相比,具有更高的輕載效率\n? 出色的可靠性和經(jīng)過(guò)實(shí)踐驗(yàn)證的 CoolMOS? 質(zhì)量以及高密度二極管耐用性\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比,性?xún)r(jià)比更高\(yùn)n? 更高效、更緊湊、重量更輕、溫度更低\n\n\n優(yōu)勢(shì):\n?\n ? 提升功率密度\n? 提升可靠性\n? 通用部件可在軟、硬開(kāi)關(guān)拓?fù)渲惺褂肻n? 提高輕載效率\n? 提高在硬開(kāi)關(guān)應(yīng)用中的效率\n? 改進(jìn)了易用性\n? 減輕可能因?yàn)?PCB 布局和封裝寄生效應(yīng)而引發(fā)的振蕩\n?\n; CoolMOS? C6 結(jié)合了英飛凌作為業(yè)內(nèi)先進(jìn)的超結(jié)MOSFET供應(yīng)商的相關(guān)經(jīng)驗(yàn)與其先進(jìn)的創(chuàng)新技術(shù)C6 器件具備了快速開(kāi)關(guān)超結(jié) MOSFET 的所有優(yōu)點(diǎn),同時(shí)又不犧牲易用性。很低的開(kāi)關(guān)和通態(tài)損耗使開(kāi)關(guān)應(yīng)用更高效,結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ? 600V CoolMOS? C6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? C6 可替代 650V CoolMOS? C3\n | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSTMC6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffer | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSTMC6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffer | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddev | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSTMC6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffer | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSTMC6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffer | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
技術(shù)參數(shù)
- Package?:
TO-220
- VDS?max:
600.0V
- RDS (on)?max:
520.0m?
- Polarity?:
N
- ID ?max:
8.1A
- Ptot?max:
66.0W
- IDpuls?max:
22.0A
- VGS(th)?min?max:
2.5V?3.5V
- QG?:
23.4nC?
- Rth?:
1.9K/W?
- RthJC?max:
1.9K/W
- RthJA?max:
62.0K/W
- Operating Temperature?min:
-55.0°C?
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
24+ |
TO-220 |
35 |
只做原廠(chǎng)渠道 可追溯貨源 |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
24+ |
TO-220 |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
15+18+ |
TO220-3 |
4951 |
只售原裝正品 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
09+ |
TO-220 |
35 |
深圳原裝進(jìn)口無(wú)鉛現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINE0N |
23+ |
TO-220-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
INF |
25+23+ |
TO-220 |
26863 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
30000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨詢(xún)更多詳細(xì)信息, |
詢(xún)價(jià) |
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