首頁 >IPI65R150CFD>規(guī)格書列表
零件型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IPI65R150CFD | 500V-900V CoolMOS? N-Channel Power MOSFET; ·650V technology with integrated fast body diode\n ·Limited voltage overshoot during hard commutation\n ·Significant Q g reduction compared to 600V CFD technology\n ·Tighter R DS(ON) max to R DS(on) typ window\n ·Easy to design-in\n ·Lower price compared to 600V CFD technology\n; 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPI65R150CFD | 絲?。?a target="_blank" title="Marking" href="/65f6150/marking.html">65F6150;Package:PG-TO262;Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IPI65R150CFD | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
技術(shù)參數(shù)
- Package?:
I2PAK (TO-262)
- VDS?max:
650.0V
- RDS (on)?max:
150.0m?
- Polarity?:
N
- ID ?max:
22.4A
- Ptot?max:
195.3W
- IDpuls?max:
72.0A
- VGS(th)?min?max:
3.5V?4.5V
- QG?:
86.0nC?
- Rth?:
0.64K/W?
- RthJC?max:
0.64K/W
- RthJA?max:
62.0K/W
- Operating Temperature?min:
-55.0°C?
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
ZETEX |
23+ |
SOT-23 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
INFINEON |
22+ |
TO-262 |
8000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-262 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO-262 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO-262 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO-262 |
7000 |
詢價(jià) | |||
INFINEON/英飛凌 |
22+ |
I2PAK(TO-262) |
92903 |
詢價(jià) | |||
INFINEON/英飛凌 |
24+ |
TO-262 |
47186 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
Infineon |
1931+ |
N/A |
493 |
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詢價(jià) |
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