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IPD90R1K2C3

N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPD90R1K2C3

Marking：9R1K2C；Package：PG-TO252；CoolMOS? Power Transistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?FullyqualifiedaccordingtoJEDECforIndustrialApplications ?Pb-freeleadplating;RoHScompliant,availableinHalogenfreemoldcompound ?Ultralowgatecharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD90R1K2C3

CoolMOS Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD90R1K2C3_V01

CoolMOS? Power Transistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?FullyqualifiedaccordingtoJEDECforIndustrialApplications ?Pb-freeleadplating;RoHScompliant,availableinHalogenfreemoldcompound ?Ultralowgatecharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD90R1K2C3ATMA2

CoolMOS? Power Transistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?FullyqualifiedaccordingtoJEDECforIndustrialApplications ?Pb-freeleadplating;RoHScompliant,availableinHalogenfreemoldcompound ?Ultralowgatecharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI90R1K2C3

CoolMOS??PowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP90R1K2C3

CoolMOS??PowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonantFlyback/Forwardtopologi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW90R1K2C3

N-ChannelMOSFETTransistor

DESCRITION ?Highpeakcurrentcapability FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.2? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPW90R1K2C3

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge CoolMOS?900Visdesignedfor: ?QuasiResonant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPD90R1K2C3

  • 功能描述：

    MOSFET N-Channel MOSFET 500-900V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
23+
TO-252
10566
□原裝元器件長(zhǎng)期供應(yīng)、靈活配合快捷供應(yīng)歡迎在線咨詢(xún)
 詢(xún)價(jià)
INFINEON/英飛凌
20+
DPAK
7290
終端可免費(fèi)提供樣品,歡迎咨詢(xún)
 詢(xún)價(jià)
INFINEON
23+
TO-252-3
16500
一級(jí)分銷(xiāo)商!
 詢(xún)價(jià)
INFINEON
22+
2000
INFINEON原裝原廠渠道
 詢(xún)價(jià)
Infineon(英飛凌)
24+
PG-TO252-3
4859
只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣(mài)原裝現(xiàn)貨
 詢(xún)價(jià)
Infineon
2025+
TO-252-3
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢(xún)價(jià)
INFINEON/英飛凌
25+
TO-252
32360
INFINEON/英飛凌全新特價(jià)IPD90R1K2C3即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
 詢(xún)價(jià)
INFINEON/英飛凌
24+
SOT-252
17136
原裝進(jìn)口假一罰十
 詢(xún)價(jià)
INFINEON
21+
TO252
7500
全新原裝公司現(xiàn)貨
詢(xún)價(jià)
INFINEON
21+
TO-252
2587
十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
 詢(xún)價(jià)
更多IPD90R1K2C3供應(yīng)商 更新時(shí)間2025-7-16 9:11:00

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