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首頁 >IPD25DP06LM>規(guī)格書列表

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IPD25DP06NM

OptiMOSTMPowerTransistor,-60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISP25DP06LM

OptiMOSTMSmallSignalTransistor,-60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISP25DP06LMS

MOSFETOptiMOSTMSmallSignalTransistor,-60V

Features ?P-Channel ?Verylowon-resistanceRDS(on)@VGS=4.5V ?100avalanchetested ?LogicLevel ?Enhancementmode ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISP25DP06NM

MOSFETOptiMOSTMSmallSignalTransistor,-60V

Features ?P-Channel ?Verylowon-resistanceRDS(on) ?100avalanchetested ?NormalLevel ?Enhancementmode ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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