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IPB60R045P7

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use; Efficiency\n ? 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n ? Integrated ESD diode from 180mN and above RDS(on)s\n? Integrated gate resistor RG\n? Rugged body diode\n? Wide portfolio in through hole and surface mount packages\n? Both standard grade and industrial grade parts are available\n\n優(yōu)勢:\nEfficiency\n ? Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency\nEase-of-use\n ? Ease-of-use in manufacturing environments by stopping ESD failures occurring\n? Integrated RG reduces MOSFET oscillation sensitivity\n? MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC\n? Excellent ruggedness during hard commutation of the body diode seen in LLC topology\n? Suitable for a wide variety of end applications and output powers\n? Parts available suitable for consumer and industrial applications\n;

The?600V CoolMOS? P7 superjunction MOSFET is the successor to the 600V CoolMOS? P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS? 7th generation platform ensure its high efficiency.\n

IPB60R045P7

絲印：60R045P7；Package：PG-TO263-3；600V CoolMOS? P7 Power Transistor

IPW60R045P7

600VCoolMOS?P7PowerTransistor

IPZA60R045P7

600VCoolMOS??P7PowerTransistor