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IPB009N03L

OptiMOS?3 Power-Transistor, 30 V

IPB009N03L G

20V-300V N-Channel Power MOSFET; ? Lowest on-state resistance\n? High DC and pulsed current capability\n? Easy to design-in\n\n優(yōu)勢:\n? Increased battery lifetime and system efficiency\n? Saving space (reducing the number of devices needed)\n? Saving costs\n;

Lowest on-state resistance in small footprint packages make OptiMOS?3 30V the best choice for the demanding requirements of battery management, Or-ing, e-fuse and hot-swap application.\n

IPB009N03LG

OptiMOS3 Power Transistor

Features ?MOSFETforORingandUninterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?Ultra-lowon-resistanceRDS(on) ?100Avalanchetested ?Pb-freeplating;RoHScompliant

IPB009N03LG

OptiMOS?3 Power-Transistor, 30 V

IPB009N03LG

OptiMOS? 3 Power-Transistor; ? MOSFET for ORing and Uninterruptible Power Supply\n? Qualified according to JEDEC for target applications\n? N-channel\n? Logic level\n? Ultra-low on-resistance RDS(on)\n? 100% Avalanche tested\n? Pb-free plating; RoHS compliant;

IPB009N03LG_16

OptiMOS?3 Power-Transistor, 30 V