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IPA65R660CFD

650V CoolMOS CFD Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R660CFD

絲?。?a target="_blank" title="Marking" href="/65f6660/marking.html">65F6660；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA65R660CFD

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA65R660CFD

500V-900V CoolMOS? N-Channel Power MOSFET; ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢(shì):\n? Low switching losses due to low Qrr at repetitive commutation on body diode\n? Self limiting di/dt and dv/dt\n? Low Qoss\n? Reduced turn on and turn of delay times\n? Outstanding CoolMOS? quality\n;

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R660CFD

650VCoolMOSCFDPowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R660CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R660CFDA

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R660CFD

N-ChannelMOSFETTransistor

?DESCRITION ?Highcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD65R660CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

技術(shù)參數(shù)

  • OPN：

    IPA65R660CFDXKSA1/IPA65R660CFDXKSA2

  • Qualification：

    Non-Automotive

  • Package name：

    PG-TO220-3/PG-TO220-3

  • VDS max：

    650 V

  • RDS (on) @10V max：

    660 m?

  • ID @25°C max：

    6 A

  • QG typ @10V：

    22 nC

  • Special Features：

    fast recovery diode

  • Polarity：

    N

  • Operating Temperature min：

    -55 °C

  • VGS(th) min：

    3.5 V

  • VGS(th) max：

    4.5 V

  • Technology：

    CoolMOS? CFD2

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
20+
TO-220
20000
全新原裝公司現(xiàn)貨
詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON
23+
TO-220
20000
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
INFINEON
24+
TO-220
10000
只做原裝 有掛有貨 假一賠十
 詢價(jià)
Infineon(英飛凌)
24+
TO-220
17048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
INFINEO
2020+
TO-220F
40
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
Infineon
24+
NA
3530
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
INFINEON
23+
TO-220F
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
INFINEON
25+23+
TO-220
28532
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
更多IPA65R660CFD供應(yīng)商 更新時(shí)間2025-7-29 16:49:00

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