首頁 >IP113SLF>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪訊 | JDSU | ||
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪訊 | JDSU | ||
POWER-MOSFETFIELDEFFECTPOWERTRANSISTOR POWER-MOSFETFIELDEFFECTPOWERTRANSISTOR ThisseriesofN-ChannelEnhancement-modePowerMOSFETutilizesGEsadvancedPowerDMOStechnologytoachievelowon-resistancewithexcellentdeviceruggednessandreliability. Thisdesignhasbeenoptimizedtogivesuperiorperformanceinmostswitchi | GESS GE Solid State | GESS | ||
CompactPlasticPackage | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?Forautomaticinsertion ?Compactplasticpackage ?Endstackable ?Fastswitching ?Lowdrivecurrent ?Easilyparalleled ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPt | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
MultipleSmall-SignalTransistors | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOSField-EffectTransistors N-ChannelEnhancement-ModePowerField-EffectTransistors Features ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?Majoritycarrierdevice | GESS GE Solid State | GESS | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI |
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