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INA330AIDGST.B

Marking：TLB；Package：VSSOP；THERMISTOR SIGNAL AMPLIFIER FOR TEMPERATURE CONTROL

FEATURES OPTIMIZEDFORPRECISION10kΩ THERMISTORAPPLICATIONS
LOWOFFSETOVERTEMPERATURE: 0.009°CTemperatureError,–40°Cto+85°C
EXCELLENTLONG-TERMSTABILITY
VERYLOW1/fNOISE:(0.01Hzto10Hz) (Peak-to-PeakEquivalentto0.0001°C) WIDEOUTPUTSWING:Within10mVofRails SUPPL

IND330-AK

LongDistanceDigitalDisplayLinkTransmitter&Receiver

[InovaSemiconductors] GeneralDescription TheGigaSTaR?DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features:

IND330SK

LongDistanceDigitalDisplayLinkTransmitter&Receiver

[InovaSemiconductors] GeneralDescription TheGigaSTaR?DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features:

INDR330B

LongDistanceDigitalDisplayLinkTransmitter&Receiver

[InovaSemiconductors] GeneralDescription TheGigaSTaR?DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features:

INDT330B

LongDistanceDigitalDisplayLinkTransmitter&Receiver

[InovaSemiconductors] GeneralDescription TheGigaSTaR?DigitalDisplayLinkisahigh-speedserialandlongdistancelinkforvideo,audioanddigitaldata,whichsupportsthepopularVESAstandardbutalsoproprietaryvideoformatsfromVGAtoUXGAwithcolordepthupto24bits. Features:

IRF330

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

IRF330

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF330

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRF330

N-CHANNELPOWERMOSFET