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IRFL210PBF

HEXFET?PowerMOSFET

VDSS=200V,RDS(on)=1.5Ohm,ID=0.96A Lead-Free

IRF

International Rectifier

IRFL210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL210TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL210TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtec

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL210TRPBF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRFL210TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL210TRPBF-TP

N-ChannelMOSFET200V,6.0A,0.65Q

Features ?Vos=200v +o=60A +Rosin50650@Ves=10V.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

IRFM210

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFM210A

AdvancedPowerMOSFET(200V,1.5ohm,0.77A)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFM210B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號:

    INA210BIRSWR

  • 制造商:

    Texas Instruments

  • 功能描述:

    IC CURRENT SHUNT MONITOR 10-UQFN

  • 功能描述:

    B version of the existing INA210AIRSW

供應(yīng)商型號品牌批號封裝庫存備注價格
TI(德州儀器)
2022+原裝正品
UQFN-10(1.8x1.4)
18000
支持工廠BOM表配單 公司只做原裝正品貨
詢價
TI(德州儀器)
24+
QFN-10(1
3022
深耕行業(yè)12年,可提供技術(shù)支持。
詢價
TI
16+
UQFN
10000
原裝正品
詢價
TI/德州儀器
24+
6-SC70
15050
原廠支持公司優(yōu)勢現(xiàn)貨
詢價
Texas Instruments
24+
10-UQFN(1.8x1.4)
53200
一級代理/放心采購
詢價
TI(德州儀器)
2447
UQFN-10(1.8x1.4)
315000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
詢價
TI
20+
QFN-10
4854
就找我吧!--邀您體驗愉快問購元件!
詢價
TI/德州儀器
23+
UQFN10
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
TI
23+
UQFN10
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
TI
21+
UQFN10
10000
原裝現(xiàn)貨假一罰十
詢價
更多INA210BIRSWR供應(yīng)商 更新時間2025-7-27 8:24:00