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IMZ120R140M1H

CoolSiC? 1200V SiC Trench MOSFET in TO247-4 package; ? Best in class switching and conduction losses\n? Benchmark high threshold voltage, Vth > 4 V\n? 0V turn-off gate voltage for easy and simple gate drive\n? Wide gate-source voltage range\n? Robust and low loss body diode rated for hard commutation\n? Temperature independent turn-off switching losses\n? Driver source pin for optimized switching performance\n\n優(yōu)勢(shì):\n? Highest efficiency\n? Reduced cooling effort\n? Higher frequency operation\n? Increased power density\n? Reduced system complexity\n;

The?CoolSiC??1200 V, 140 mΩ?SiC MOSFET?in TO247-4 package build on a state-of-the-art trench?semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC? MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.\n

IMZ120R140M1H

絲?。?a target="_blank" title="Marking" href="/12m1h140/marking.html">12M1H140；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

IMBG120R140M1H

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

IMW120R140M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET