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ISC426N

iscSiliconNPNPowerTransistor

DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-hFE=250-400@IC=1.5A ·Collector-EmitterSaturationVoltage- :VCE(sat)=1.1V(Max)@IC=4A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposeswitchi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

J426

ExtendedTemperatureproductsforIndustrialApplications

pulse

Pulse A Technitrol Company

KF426B

SPECIFICATIONSFORSAWFILTER(BANDPASSFILTERSFOR400MHz~520MHzRANGE)

KECKEC CORPORATION

KEC株式會(huì)社

KF426BS

SPECIFICATIONSFORSAWFILTER(BANDPASSFILTERSFOR400MHz~520MHzRANGE)

KECKEC CORPORATION

KEC株式會(huì)社

KF426BV

SPECIFICATIONSFORSAWFILTER(BANDPASSFILTERSFOR400MHz~520MHzRANGE)

KECKEC CORPORATION

KEC株式會(huì)社

L426

IGBTModules

ShortCircuitSOACapabilitySquareRBSOA Features ?NPTIGBTtechnology ?lowsaturationvoltage ?lowswitchinglosses ?switchingfrequencyupto30kHz ?squareRBSOA,nolatchup ?highshortcircuitcapability ?positivetemperaturecoefficientforeasyparallelling

IXYS

IXYS Corporation

LS426

LOWLEAKAGELOWDRIFTMONOLITHICDUALN-CHANNELJFET

FEATURES HIGHINPUTIMPEDANCEIG=0.25pAMAX HIGHGAINgfs=120μmhoMIN LOWPOWEROPERATIONVGS(off)=2VMAX

LINEAR

Linear Integrated Systems

LSU426

N-CHANNELJFET

MICROSS

Micross Components

LSU426

N-CHANNELJFET

MICROSS

Micross Components

LSU426

N-CHANNELJFET

MICROSS

Micross Components

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