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IMW120R045M1

CoolSiC? 1200V SiC Trench MOSFET in TO247-3 package; ? Best in class switching and conduction losses\n? Benchmark high threshold voltage, Vth > 4 V\n? Short-circuit robustness, 3 μs\n? Robust and low loss body diode rated for hard commutation\n? IGBT-compatible gate driving, +15V for turn-on\n\n優(yōu)勢:\n? Highest efficiency\n? Reduced cooling effort\n? Higher frequency operation\n? Increased power density\n? Reduced system complexity\n;

The?CoolSiC??1200 V, 45 mΩ SiC MOSFET?in TO247-3 package build on a state-of-the-art trench?semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC? MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.\n

IMW120R045M1

絲?。?a target="_blank" title="Marking" href="/120m1045/marking.html">120M1045；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

IMW120R045M1XKSA1

CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

IMZ120R045M1

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

Features ?Verylowswitchinglosses ?Threshold-freeonstatecharacteristic ?Widegate-sourcevoltagerange ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?0Vturn-offgatevoltage ?Fullycontrollabledv/dt ?Commutationrobustbodydiode,readyforsynchronousrectification ?Eas

IMW120R090M1H

INFINEON/英飛凌
TO-247

INFINEON/英飛凌