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IMW120R040M1H

絲?。?a target="_blank" title="Marking" href="/12m1h040/marking.html">12M1H040；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R040M1H

CoolSiC? 1200 V, 40 mΩ SiC Trench MOSFET in TO247-3 package; \n優(yōu)勢(shì):\n? Highest efficiency\n? Reduced cooling effort\n? Higher frequency operation\n? Increased power density\n? Reduced system complexity\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R040M1

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=54AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R040M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=61AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R040M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R040M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R040M1H

CoolSiC??1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R040M1H

EiceDRIVER?1ED314xMU12F(1ED-X3Compact)

Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
24+
TOP-247
39500
進(jìn)口原裝現(xiàn)貨 支持實(shí)單價(jià)優(yōu)
 詢價(jià)
Infineon
23+
PG-TO247-3
15500
英飛凌優(yōu)勢(shì)渠道全系列在售
 詢價(jià)
Infineon Technologies
23+
SMD
3652
原廠正品現(xiàn)貨供應(yīng)SIC全系列
 詢價(jià)
INFINEON
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
Cypress Semiconductor
2025+
13566
詢價(jià)
INFINOEN
24+
TO-247-3
90000
一級(jí)代理進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
 詢價(jià)
INFINEON/英飛凌
24+
MOS
5000
原廠支持公司優(yōu)勢(shì)現(xiàn)貨
 詢價(jià)
Infineon(英飛凌)
2447
PG-TO247-3
105000
30個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
80000
詢價(jià)
更多IMW120R040M1H供應(yīng)商 更新時(shí)間2025-7-29 16:04:00

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