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IMT65R010M2H

絲?。?a target="_blank" title="Marking" href="/65r010m2/marking.html">65R010M2；Package：PG-HSOF-8；CoolSiC? MOSFET 650 V G2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMT65R010M2H

CoolSiC? MOSFET 650 V G2 in TOLL package, 10 m?; ? Excellent figures-of-merit (FOMs)\n? Best in class RDS(on)\n? Outstanding robustness\n? Flexible driving voltage range\n? Pin-to-pin compatible with all 8x8 FETs\n? Improved package interconnect with .XT\n? Tj,max=175°C\n? 12k-cycle in TCoB\n\n優(yōu)勢(shì):\n? Enables BOM savings\n? Maximizes the system performance per $\n? Highest reliability and longer lifetime\n? Enables top efficiency and power density\n? Small footprint to more power density\n? Most compact daughter card design\n? Fully leverages SiC in a small footprint\n \n\n\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG65R010M2H

CoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMDQ65R010M2H

CoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW65R010M2H

SiCMOSFETCoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA65R010M2H

SiCMOSFETCoolSiC?MOSFET650VG2

Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon/英飛凌
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
Infineon
23+
PG-HSOF-8
15500
英飛凌優(yōu)勢(shì)渠道全系列在售
 詢價(jià)
INFINEON/英飛凌
21+
QFN
3000
正規(guī)渠道原裝正品
 詢價(jià)
Infineon(英飛凌)
24+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
nanotec
24+
500000
行業(yè)低價(jià),代理渠道
 詢價(jià)
NANOTEC
23+
原廠封裝
9888
專做原裝正品,假一罰百!
 詢價(jià)
Nanotec
18+
ZIP-25
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢價(jià)
Nanotec
專業(yè)鐵帽
ZIP25
10
原裝鐵帽專營(yíng),代理渠道量大可訂貨
 詢價(jià)
NANOTEC
20+
ZIP25
67500
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
SAMSUNG/三星
2447
ZIP
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
更多IMT65R010M2H供應(yīng)商 更新時(shí)間2025-7-29 17:12:00

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