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INA111BP

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

FEATURES FETINPUT:IB=20pAmax HIGHSPEED:TS=4ms(G=100,0.01%) LOWOFFSETVOLTAGE:500mVmax LOWOFFSETVOLTAGEDRIFT: 5mV/°Cmax HIGHCOMMON-MODEREJECTION: 106dBmin 8-PINPLASTICDIP,SOL-16SOIC APPLICATIONS MEDICALINSTRUMENTATION DATAACQUISITION DESCRIPTION The

TI2Texas Instruments

德州儀器美國德州儀器公司

INA111BP.A

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

FEATURES FETINPUT:IB=20pAmax HIGHSPEED:TS=4ms(G=100,0.01%) LOWOFFSETVOLTAGE:500mVmax LOWOFFSETVOLTAGEDRIFT: 5mV/°Cmax HIGHCOMMON-MODEREJECTION: 106dBmin 8-PINPLASTICDIP,SOL-16SOIC APPLICATIONS MEDICALINSTRUMENTATION DATAACQUISITION DESCRIPTION The

TI2Texas Instruments

德州儀器美國德州儀器公司

INA111BU

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111BU

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA111BU

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

FEATURES FETINPUT:IB=20pAmax HIGHSPEED:TS=4ms(G=100,0.01%) LOWOFFSETVOLTAGE:500mVmax LOWOFFSETVOLTAGEDRIFT: 5mV/°Cmax HIGHCOMMON-MODEREJECTION: 106dBmin 8-PINPLASTICDIP,SOL-16SOIC APPLICATIONS MEDICALINSTRUMENTATION DATAACQUISITION DESCRIPTION The

TI2Texas Instruments

德州儀器美國德州儀器公司

INA111BU.A

HighSpeedFET-InputINSTRUMENTATIONAMPLIFIER

FEATURES FETINPUT:IB=20pAmax HIGHSPEED:TS=4ms(G=100,0.01%) LOWOFFSETVOLTAGE:500mVmax LOWOFFSETVOLTAGEDRIFT: 5mV/°Cmax HIGHCOMMON-MODEREJECTION: 106dBmin 8-PINPLASTICDIP,SOL-16SOIC APPLICATIONS MEDICALINSTRUMENTATION DATAACQUISITION DESCRIPTION The

TI2Texas Instruments

德州儀器美國德州儀器公司

IPMC-111PB

IndustrialminitypeEthernettofiberPoEmediaconverter

ORING

ORing Industrial Networking Corp

IRFE111

MultipleSmall-SignalTransistors

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRFF111

PowerMOSField-EffectTransistors

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?Majoritycarrierdevice

GESS

GE Solid State

IRFF111

IM-CHANIMELPOWERMOSFETsTO-39PACKAGE

TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

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65692
一級(jí)代理原裝正品 價(jià)格優(yōu)勢 只做原裝!
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23+
65480
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ROHM
23+
SOT163
11092
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ROHM
24+
SOT-163SOT-23-6
11244
新進(jìn)庫存/原裝
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ROHM
24+
原廠封裝
5044
原裝現(xiàn)貨假一罰十
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ROHM
23+
SOT-163
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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ROHM
21+
02+
12588
原裝正品,自己庫存 假一罰十
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ROHM
1923+
SOT-163
35689
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9600
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ROHM
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50000
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更多IMC-V111ET-TB供應(yīng)商 更新時(shí)間2025-7-22 17:19:00

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