首頁 >IMBF170R1K0M1>規(guī)格書列表
零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IMBF170R1K0M1 | EiceDRIVER? 1ED314xMU12F (1ED-X3 Compact) Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IMBF170R1K0M1 | SiC N-Channel MOSFET FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Typ.)@VGS=12V APPLICATIONS ·Energygeneration ·Industrialpowersupplies ·Infrastructure–Charger | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IMBF170R1K0M1 | CoolSiC? 1700 V SiC Trench MOSFET in TO-263-7 package; \n優(yōu)勢:\n? 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies\n? SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink\n? Reduced isolation effort due to extended creepage and clearance distances of package\n? Reduced system complexity\n? High power density\n; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IMBF170R1K0M1 | 絲?。?a target="_blank" title="Marking" href="/170m11k0/marking.html">170M11K0;Package:PG-TO263-7;CoolSiC??1700V SiC Trench MOSFET Silicon Carbide MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
CoolSiC?1700VSiCTrenchMOSFET:SiliconCarbideMOSFET Features ?VDSS=1700VatTvj=25°C ?IDDC=5.4AatTC=25°C ?RDS(on)=1000mΩatVGS=12V,Tvj=25°C ?Optimizedforfly-backtopologies ?12V/0Vgate-sourcevoltagecompatiblewithmostfly-backcontrollers ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
技術(shù)參數(shù)
- OPN:
IMBF170R1K0M1XTMA1
- Qualification:
Industrial
- Package name:
PG-TO263-7
- VDS max:
1700 V
- ID @25°C max:
5.2 A
- Polarity:
N
- Operating Temperature min:
-55 °C
- Operating Temperature max:
175 °C
- Technology:
Silicon Carbide
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
標(biāo)準(zhǔn)封裝 |
13048 |
原廠渠道供應(yīng),大量現(xiàn)貨,原型號開票。 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-263-7 |
32000 |
INFINEON/英飛凌全新特價IMBF170R1K0M1即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INFINEON/英飛凌 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力! |
詢價 | ||
英飛凌 |
24+ |
TO-263-7-13 |
5000 |
全新、原裝 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
MODULE |
14100 |
原裝正品 |
詢價 | ||
Infineon(英飛凌) |
2324+ |
NA |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價 | ||
Infineon(英飛凌) |
24+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
INFINEON/英飛凌 |
22+ |
NA |
18000 |
只做全新原裝,支持BOM配單,假一罰十 |
詢價 | ||
Infineon(英飛凌) |
2405+ |
Original |
50000 |
只做原裝優(yōu)勢現(xiàn)貨庫存,渠道可追溯 |
詢價 |
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