描述 Description

High Speed 650 V, 40 A hard-switching TRENCHSTOPTM?IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package,?is defined as \"best-in-class\" IGBT.

特性 Features

? 650 V breakthrough voltage
? Compared to best-in-class HighSpeed 3 family
? Factor 2.5 lower Qg
? Factor 2 reduction in switching losses
? 200mV reduction in VCEsat
? Co-packed with Rapid Si-diode technology
? Low COES/EOSS
? Mild positive temperature coefficient VCEsat
? Temperature stability of Vf

優(yōu)勢:
? Best-in-class efficiency, resulting in lower junction and?case temperature leading to higher device reliability
? 50 V increase in the bus voltage possible without compromising?reliability
? Higher power density design

簡介

IKW40N65H5屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的IKW40N65H5晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。