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IKW40N120CS6

Discrete IGBT with Anti-Parallel Diode; ? High efficiency in hard switching and resonant topologies\n? Low saturation voltage if 1.85 V combined with low switching losses\n? Easy paralleling capability due to positive temperature coefficient in VCEsat\n? Low EMI\n? Low Gate Charge QG\n? Very soft, fast recovery anti-parallel diode\n? High ruggedness, temperature stable behaviour\n? Very tight parameter distribution\n\n優(yōu)勢(shì):\n? Lowest losses on IGBT, high system efficiency for higher power output\n? Fast and easy replacement of predecessor H3 technology\n? High device reliability and lifetime expectancy\n;

High Speed 1200 V, 40 A hard-switching TRENCHSTOP??IGBT6 co-packed with a soft and fast recovery full current anti-parallel diode in a TO247 package is designed to reach the best compromise between switching and conduction losses.\n

IKW40N120CS6

絲?。?a target="_blank" title="Marking" href="/k40mcs6/marking.html">K40MCS6；Package：PG-TO247-3；High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode

IKW40N120CS6XKSA1

Package：TO-247-3；包裝：管件 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT TRENCH/FS 1200V 80A TO247-3

IKY40N120CS6

HighspeedsoftswitchingTRENCHSTOPTMIGBT6inTrenchandFieldstoptechnologycopackedwithsoftandfastrecoveryanti-paralleldiode

IKW40N120H3

INFINEON
TO-247