描述 Description

Infineon's 600 V,?4 A hard-switching TRENCHSTOP? IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

特性 Features

? Lowest VCEsatdrop for lower conduction losses
? Low switching losses
? Easy parallel switching capability due to positive temperature coefficient in VCEsat
? Very soft, fast recovery anti-parallel Emitter Controlled Diode
? High ruggedness, temperature stable behavior
? Low EMI emissions
? Low gate charge
? Very tight parameter distribution

優(yōu)勢(shì):
? Highest efficiency – low conduction and switching losses
? Comprehensive portfolio in 600 V and 1200 V for flexibility of design
? High device reliability

簡(jiǎn)介

IKP04N60T屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的IKP04N60T晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類(lèi)型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。