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MDP15N60G

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60G

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60GTH

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60GTH

N-ChannelMOSFET600V,15A,0.40(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP15N60GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MGP15N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP15N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficien

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MS15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSB15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSF15N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

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Infineon
23+
TO-252
11846
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Infineon/英飛凌
22+
TO252-3
6000
十年配單,只做原裝
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Infineon/英飛凌
23+
TO252-3
6000
原裝正品，支持實單
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Infineon/英飛凌
22+
TO252-3
25000
只做原裝進口現(xiàn)貨,專注配單
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原裝正品
23+
TO-252
16725
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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Infineon/英飛凌
22+
TO252-3
25000
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INFINEON
23+
TO252-3
8000
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INFINEON
23+
TO252-3
7000
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22+
TO252-3
93600
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Infineon
25+
TO252-3
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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