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IKB40N65ES5

Discrete IGBT with Anti-Parallel Diode; ? Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP? 5 H5\n? ICn=four times nominal current (100°C Tc)\n? Soft current fall characteristics with no tail current\n? Symmetrical, low voltage overshoot\n? Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping\n? Maximum junction temperature Tvj= 175°C\n? Qualified according to JEDEC standards\n\n優(yōu)勢:\n? VCE(peak)?clamping circuits not required\n? Suitable for use with single turn-on / turn-off gate resistor\n? No need for gate clamping components\n? Gate drivers with Miller clamping not required\n? Reduction in the EMI filtering needed\n? Excellent for paralleling\n;

Infineon's 650 V, 40 A?high speed switching?TRENCHSTOP? 5 in D2Pak?(TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.\n

IKB40N65ES5

High speed switching series 5th generation

BIDW40N65ES5

BIDW40N65ES5InsulatedGateBipolarTransistor(IGBT)

Features n650V,40A,LowCollector-Emitter SaturationVoltage(VCE(sat)) nNoveltrench-gatefield-stoptechnology nOptimizedforconduction nMedium-speedswitching nMaximumoperatingTj=175°C nRoHScompliant* Applications nSwitched-ModePowerSupplies(SMPS) nUninterruptib

IKFW40N65ES5

TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrentratedRAPID1fastandsoftantiparalleldiodeinfullyisolatedpackage

IKW40N65ES5

highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode