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首頁 >IKB20N60TA>規(guī)格書列表

零件型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

IKW20N60T

IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60T

IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW20N60TA

DesignedforDC/ACconvertersforAutomotiveApplication

LowLossDuoPack:IGBTinTrenchStop?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ?AutomotiveAECQ101qualified ?DesignedforDC/ACconvertersforAutomotiveApplication ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISPP20N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPW20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤220m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDP20N60B

HighVoltageIGBTwithoptionalDiode

VCES=600V IC25=32A VCE(sat)typ=2.2V Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultr

IXYS

IXYS Corporation

IXFH20N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH20N60

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH20N60Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -easiertodrive -fasterswitching ?LowRDS

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IKB20N60TA

  • 功能描述：

    IGBT 晶體管 IGBT PRODUCTS

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
英飛凌
24+
TO-263-3
5000
全新、原裝
 詢價(jià)
INFINEON/英飛凌
2447
TO-263-3
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
INFINEON
21+
標(biāo)準(zhǔn)封裝
60
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號(hào)
 詢價(jià)
INFINEON
22+
N/A
2500
進(jìn)口原裝,優(yōu)勢現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
22+
TO-263
20000
原裝現(xiàn)貨,實(shí)單支持
 詢價(jià)
INFINEON/英飛凌
0
TO-263-3
90
詢價(jià)
INFINEON/英飛凌
22+
TO-263
20000
原裝現(xiàn)貨,實(shí)單支持
 詢價(jià)
ADI
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
2407+
TO-263-3
30098
全新原裝!倉庫現(xiàn)貨,大膽開價(jià)!
 詢價(jià)
更多IKB20N60TA供應(yīng)商 更新時(shí)間2024-2-29 11:17:00

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