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首頁 >IKB10N60T>規(guī)格書列表

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IXTI10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTM10N60

10AMP,600V,0.55-ohm/0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Corporation

IXTP10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

N-ChannelEnhancementMode

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤740m?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP10N60PM

PolarHVPowerMOSFET

PolarHV?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTP10N60PM

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤0.74?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequen

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

JCS10N60BT

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60BT-O-B-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60C

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IKB10N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS DuoPack 600V 10A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
24+
SOT-263
17193
原裝進(jìn)口假一罰十
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ADI
21+
MSOP-8
3000
原裝現(xiàn)貨
 詢價
INFINEON
24+
TO-263
5000
原廠授權(quán)代理 價格絕對優(yōu)勢
 詢價
INFINEON/英飛凌
24+
TO-263
11100
全新原裝現(xiàn)貨
 詢價
Infineon(英飛凌)
24+
TO263
8048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價
INFINEON
2430+
TO-263
8540
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
英飛凌
24+
TO-263-3
5000
全新、原裝
 詢價
INFINEON
24+
P-TO-263-3-2
8866
詢價
INFINEON
100
原裝現(xiàn)貨,價格優(yōu)惠
 詢價
更多IKB10N60T供應(yīng)商 更新時間2025-7-19 14:03:00

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