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IRFE024

SimpleDriveRequirements

IRFF024

60V,N-CHANNEL

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsof

IRFF024

N-ChannelMOSFETinaHermeticallysealedTO39

IRFL024

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075? ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFL024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075? ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFL024N

AdvancedProcessTechnology

IRFL024N

SurfaceMount

IRFL024NPBF

HEXFET?PowerMOSFET

VDSS=55V RDS(on)=57.5m? ID=5.1A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFL024NPBF

AdvancedProcessTechnology

IRFL024NTR

SurfaceMount