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IRF640

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF640areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. FEATURES ●RDS(ON)=0.180?@VGS=10V ●Ultralowgatecharge(63nCmax.) ●

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF640

N-ChannelPowerMosfets

18A,200V,0.180Ohm,N-ChannelPowerMosfets TheseareN-Channelenhansementmodesilicongatepowerfieldeffecttransistors.TheyareadvancepowerMOSFETsdesigned,tested,andguaranteedtowithstancdaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF640

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF640

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640

N-CHANNEL200V-0.150W-18ATO-220/TO-220FPMESHOVERLAY?MOSFET

APPLICATIONS nHIGHCURRENTSWITCHING nUNINTERRUPTIBLEPOWERSUPPLY(UPS) nDC/DCCOVERTERSFORTELECOM, INDUSTRIAL,ANDLIGHTINGEQUIPMENT.

SYC

SYC Electronica

IRF640A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.144Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.180Ω(?TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-220
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
VISHAY
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
VISHAY/威世
24+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IFM
23+
SENSOR
128
全新、原裝
 詢價
ST意法
20+
LGA12
17000
加速度計,只做全新原裝
 詢價
ST/意法
23+
VFLGA-12221
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
STMICROELECTRONICS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
更多IIRF640N供應(yīng)商 更新時間2025-7-29 14:00:00

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