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IGT60R190D1S

絲印：60S190D1；Package：PG-HSOF-8-3；600V CoolGaN??enhancement-mode Power Transistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforstandardgradeapplicationsaccordingtoJEDECstandards

IGT60R190D1S

CoolGaN?600V 電子模式功率晶體管IGT60R190D1S具有極高的效率和可靠性;

IGT60R190D1S CoolGaN?600V 增強(qiáng)型功率晶體管提供快速的開關(guān)速度和最小的開關(guān)損耗， 并實(shí)現(xiàn)最高效率的簡(jiǎn)單半橋拓?fù)浣Y(jié)構(gòu)。\n CoolGaN?600V系列符合全面為GaN而定制的認(rèn)證，遠(yuǎn)遠(yuǎn)超出現(xiàn)有標(biāo)準(zhǔn)。 它針對(duì)數(shù)據(jù)通信和服務(wù)器開關(guān)電源，電信以及適配器，充電器，無線充電以及其他需要最高效率或功率密度的應(yīng)用。\n

60R190D1

600VCoolGaN?enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

60R190D1

600VCoolGaN??enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGLD60R190D1

600VCoolGaN??enhancement-modePowerTransistor

Features ?Enhancementmodetransistor–NormallyOFFswitch ?Ultrafastswitching ?Noreverse-recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD