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IGLT65R045D2

絲?。?a target="_blank" title="Marking" href="/65r045d2/marking.html">65R045D2；Package：PG-HDSOP-16；CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ?Enhancementmodetransistor?NormallyOFFswitch ?Ultrafastswitching ?Noreverse?recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?ESD(HBM/CDM)JEDECstandards Benefits ?Improvessystemefficiency

IGLT65R045D2

CoolGaN? Transistor 650 V G5; ? 650 V e-mode power transistor\n? Ultrafast switching\n? No reverse-recovery charge\n? Capable of reverse conduction\n? Low gate charge, low output charge\n? Superior commutation ruggedness\n? Low dynamic RDS(on)\n? High ESD robustness: 2 kV HBM - 1 kV CDM\n? Top-side cooled package\n? JEDEC qualified (JESD47, JESD22)\n\n優(yōu)勢:\n? Supports high operating frequency\n? Enables highest system efficiency\n? Enables ultrahigh power density designs\n? Supports BOM cost savings\n;

IGOT65R045D2

CoolGaN?Gen2650VCoolGaN?enhancement?modePowerTransistor

Features ?Enhancementmodetransistor?NormallyOFFswitch ?Ultrafastswitching ?Noreverse?recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?ESD(HBM/CDM)JEDECstandards Benefits ?Improvessystemefficiency

IGT65R045D2

CoolGaN?Gen2650VCoolGaN?enhancement?modePowerTransistor

Features ?Enhancementmodetransistor?NormallyOFFswitch ?Ultrafastswitching ?Noreverse?recoverycharge ?Capableofreverseconduction ?Lowgatecharge,lowoutputcharge ?Superiorcommutationruggedness ?ESD(HBM/CDM)JEDECstandards Benefits ?Improvessystemefficiency