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IDW40G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5

絲印：D4065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1Description ThinQ!?Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.Thankstothemorecompactdesignandthin-wafer technology,thenewfamilyofproductsshowsimprovedefficiencyoverallload conditions,resultingfromboththeimprovedtherm

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5

CoolSiC? Schottky Diode; ? V br at 650V\n? Improved figure of merit (Q c x V f)\n? No reverse recovery charge\n? Soft switching reverse recovery waveform\n? Temperature independent switching behavior\n? High operating temperature (T j max 175°C)\n? Improved surge capability\n? Pb-free lead plating\n\n優(yōu)勢(shì):\n? Higher safety margin against overvoltage and complements CoolMOS? offer\n? Improved efficiency over all load conditions\n? Increased efficiency compared to Silicon Diode alternatives\n? Reduced EMI compared to snappier Silicon diode reverse recovery waveform\n? Highly stable switching performance\n? Reduced cooling requirements\n? Reduced risks of thermal runaway\n? RoHS compliant\n? Very high quality and high volume manufacturing capability\n;

CoolSiC? generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).The new CoolSiC? Generation 5 has been designed to complement our 650V CoolMOS? families: this ensures meeting the most stringent application requirements in this voltage range.\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5B

CoolSiC? Schottky Diode; ? V br at 650V\n? Improved figure of merit (Q c x V f)\n? No reverse recovery charge\n? Soft switching reverse recovery waveform\n? Temperature independent switching behavior\n? High operating temperature (T j max 175°C)\n? Improved surge capability\n? Pb-free lead plating\n\n優(yōu)勢(shì):\n? Higher safety margin against overvoltage and complements CoolMOS? offer\n? Improved efficiency over all load conditions\n? Increased efficiency compared to Silicon Diode alternatives\n? Reduced EMI compared to snappier Silicon diode reverse recovery waveform\n? Highly stable switching performance\n? Reduced cooling requirements\n? Reduced risks of thermal runaway\n? RoHS compliant\n? Very high quality and high volume manufacturing capability\n;

CoolSiC? generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).The new CoolSiC? Generation 5 has been designed to complement our 650V CoolMOS? families: this ensures meeting the most stringent application requirements in this voltage range.\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5B

Silicon Carbide Schottky Diode

FEATURES ·Revolutionarysemiconductormaterial-SiliconCarbide ·Highsurgecurrentcapability ·Optimizedforhightemperatureoperation ·Benchmarkswitchingbehavior ·Noreverserecovery APPLICATIONS ·Solarinverter ·Powerfactorcorrection ·Switchmodepowersupply

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IDW40G65C5FKSA1

SiC Silicon Carbide Diode

1Description ThinQ!?Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.Thankstothemorecompactdesignandthin-wafer technology,thenewfamilyofproductsshowsimprovedefficiencyoverallload conditions,resultingfromboththeimprovedtherm

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5XKSA1

SiC Silicon Carbide Diode

1Description ThinQ!?Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.Thankstothemorecompactdesignandthin-wafer technology,thenewfamilyofproductsshowsimprovedefficiencyoverallload conditions,resultingfromboththeimprovedtherm

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5_12

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5B

650V SiC Schottky Diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW40G65C5B_15

650V SiC Schottky Diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

技術(shù)參數(shù)

  • Product Status：

    active and preferred

  • Technology：

    CoolSiC? G5

  • Qualification：

    Industrial

  • VDC min：

    650 V

  • IF max：

    40 A

  • VF：

    1.5 V

  • QC：

    55 nC

  • Package：

    TO-247

  • I(FSM) max：

    182 A

  • IR：

    2.2 μA

  • CT：

    1140 pF

  • Ptot max：

    183 W

  • RthJC：

    0.6 K/W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
17748
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。
 詢價(jià)
INFINEON/英飛凌
24+
PG-TO247
20
只做原廠渠道 可追溯貨源
 詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
INFINEON/英飛凌
19+
TO-247
240
進(jìn)口原裝假一賠十支持含稅
 詢價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
Infineon/英飛凌
1950+
TO247
4856
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
INFINOEN
24+
TO-247-3
90000
一級(jí)代理進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
 詢價(jià)
INFINEO
24+
TO247
65200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
INFINEON/英飛凌
21+
TO247
1574
詢價(jià)
更多IDW40G65C5供應(yīng)商 更新時(shí)間2025-7-29 23:00:00

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