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IDW12G65C5

CoolSiC? Schottky Diode; ? V br at 650V\n? Improved figure of merit (Q c x V f)\n? No reverse recovery charge\n? Soft switching reverse recovery waveform\n? Temperature independent switching behavior\n? High operating temperature (T j max 175°C)\n? Improved surge capability\n? Pb-free lead plating\n\n優(yōu)勢:\n? Higher safety margin against overvoltage and complements CoolMOS? offer\n? Improved efficiency over all load conditions\n? Increased efficiency compared to Silicon Diode alternatives\n? Reduced EMI compared to snappier Silicon diode reverse recovery waveform\n? Highly stable switching performance\n? Reduced cooling requirements\n? Reduced risks of thermal runaway\n? RoHS compliant\n? Very high quality and high volume manufacturing capability\n;

CoolSiC? generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).The new CoolSiC? Generation 5 has been designed to complement our 650V CoolMOS? families: this ensures meeting the most stringent application requirements in this voltage range.\n

IDW12G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof

IDW12G65C5_12

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

IDW12G65C5FKSA1

Package：TO-247-3；包裝：散裝 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 650V 12A TO247-3

IDW12G65C5XKSA1

Package：TO-247-3；包裝：管件 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 650V 12A TO247-3