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首頁>IDT70T653MS12BCI>規(guī)格書詳情

IDT70T653MS12BCI中文資料IDT數(shù)據(jù)手冊PDF規(guī)格書

IDT70T653MS12BCI
廠商型號

IDT70T653MS12BCI

功能描述

HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

文件大小

309.44 Kbytes

頁面數(shù)量

24

生產(chǎn)廠商

IDT

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-16 23:01:00

人工找貨

IDT70T653MS12BCI價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

IDT70T653MS12BCI規(guī)格書詳情

描述 Description

The IDT70T653M is a high-speed 512K x 36 Asynchronous Dual-Port Static RAM. The IDT70T653M is designed to be used as a stand-alone 18874K-bit Dual-Port RAM. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (eitherCE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.

特性 Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write cycles

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70T653M easily expands data bus width to 72 bits or more using the Busy Input when cascading more than one device

◆ Busy input for port contention management

◆ Interrupt Flags

◆ Full on-chip hardware support of semaphore signaling between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Sleep Mode Inputs on both ports

◆ Single 2.5V (±100mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Includes JTAG functionality

◆ Available in a 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

產(chǎn)品屬性

  • 型號:

    IDT70T653MS12BCI

  • 功能描述:

    IC SRAM 18MBIT 12NS 256BGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲器:

    EEPROMs - 串行

  • 存儲器類型:

    EEPROM

  • 存儲容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

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