- IC/元器件
- PDF資料
- 商情資訊
- 絲印反查
首頁>IDT70P3517>規(guī)格書詳情
IDT70P3517集成電路(IC)的存儲器規(guī)格書PDF中文資料

廠商型號 |
IDT70P3517 |
參數(shù)屬性 | IDT70P3517 封裝/外殼為576-BBGA,F(xiàn)CBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC SRAM 9MBIT PARALLEL 576FCBGA |
功能描述 | 512K/256K x36 SYNCHRONOUS DUAL QDR-II |
封裝外殼 | 576-BBGA,F(xiàn)CBGA |
文件大小 |
873.39 Kbytes |
頁面數(shù)量 |
20 頁 |
生產(chǎn)廠商 | IDT |
網(wǎng)址 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-8-20 11:32:00 |
人工找貨 | IDT70P3517價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
IDT70P3517規(guī)格書詳情
Functional Description
As a memory standard, the (Quad Data Rate) QDR-II SRAM interface has become increasingly common in high performance networking systems. With the QDR-II interface/configuration, memory throughput is increased without increasing the clock rate via the use of two unidirectional buses on each of providing 2 ports of QDR-II makes this a Dual-QDRII Static Ram two ports to transfer data without the need for bus turnaround.
特性 Features
◆ 18Mb Density (512K x 36)
– Also available 9Mb Density (256K x 36)
◆ QDR-II x 36 Burst-of-2 Interface
– Commercial: 233MHz, 250MHz
◆ Two independent ports
– True Dual-Port Access to common memory
◆ Separate, Independent Read and Write Data Buses on each Port
– Supports concurrent transactions
◆ Two-Word Burst on all DPRAM accesses
◆ DDR (Double Data Rate) Multiplexed Address Bus
– One Read and One Write request per clock cycle
◆ DDR (Double Data Rate) Data Buses
– Four word burst data (Two Read and Two Write) per clock on each port
– Four word transfers each of Read & Write per clock cycle per port (four word bursts on 2 ports)
◆ Octal Data Rate
◆ Port Enable pins (E0,E1) for depth expansion
◆ Dual Echo Clock Output with DLL-based phase alignment
◆ High Speed Transceiver Logic inputs
– scaled to receive signals from 1.4V to 1.9V
◆ Scalable output drivers
– Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V
– Output impedance adjustable from 35 ohms to 70 ohms
◆ 1.8V Core Voltage (VDD)
◆ 576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch)
◆ JTAG Interface - IEEE 1149.1 Compliant
產(chǎn)品屬性
- 產(chǎn)品編號:
IDT70P3517S233RMI
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 雙端口,同步 QDR II
- 存儲容量:
9Mb(256K x 36)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
576-BBGA,F(xiàn)CBGA
- 供應(yīng)商器件封裝:
576-FCBGA(25x25)
- 描述:
IC SRAM 9MBIT PARALLEL 576FCBGA
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
16+ |
QFP |
2500 |
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
IDT |
NA |
5650 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IDT |
1923+ |
BGAQFP |
1680 |
只做進(jìn)口原裝!假一罰十!絕對有貨! |
詢價 | ||
IDT, Integrated Device Techno |
23+ |
576-FCBGA25x25 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
IDT |
23+ |
576-FCBGA(25x25) |
9000 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
Renesas |
25+ |
電聯(lián)咨詢 |
7800 |
公司現(xiàn)貨,提供拆樣技術(shù)支持 |
詢價 | ||
IDT |
22+ |
576FCBGA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IDT, Integrated Device Technol |
24+ |
576-FCBGA(25x25) |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
IDT, Integrated Device Technol |
21+ |
90-TFBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 |