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IRFP450B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP450LC

PowerMOSFET(Vdss=500V,Rds(on)=0.40ohm,Id=14A)

VDSS=500V RDS(on)=0.40? ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRF

International Rectifier

IRFP450LC

PowerMOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP450LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP450LCPBF

HEXFETPowerMOSFET

VDSS=500V RDS(on)=0.40? ID=14A Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeeds

IRF

International Rectifier

IRFP450LCPBF

PowerMOSFET

VDS(V)500 RDS(on)(Ω)VGS=10V0.40 Qg(Max.)(nC)74 Qgs(nC)19 Qgd(nC)35 ConfigurationSingle DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnologythedeviceimprovement

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP450LCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP450N

PowerMOSFET(Vdss=500V,Rds(on)max=0.37ohm,Id=14A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRF

International Rectifier

IRFP450N

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-free APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninter

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP450NPBF

HEXFET?PowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterrupt

IRF

International Rectifier

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Littelfuse(美國(guó)力特)
24+
7350
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SAMTEC
24+
con
35960
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SAMTEC/申泰
23+
www.x07.cn
35078
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SAMTEC
24+
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2500
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SAMTEC
110
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SAMTEC
24+
con
10000
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