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IDK04G65C5

650V SiC thinQ!??Generation 5 diodes

Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDK04G65C5

Silicon Carbide Schottky Diode

FEATURES ·Highsurgecurrentcapability ·Noreverserecovery/Noforwardrecovery ·Benchmarkswitchingbehavior APPLICATIONS ·Solarinverter ·Powerfactorcorrection ·Switchmodepowersupply ·Uninterruptiblepowersupply

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IDK04G65C5

CoolSiC? Schottky Diode; ? V br at 650V\n? Improved figure of merit (Q c x V f)\n? No reverse recovery charge\n? Soft switching reverse recovery waveform\n? Temperature independent switching behavior\n? High operating temperature (T j max 175°C)\n? Improved surge capability\n? Pb-free lead plating\n\n優(yōu)勢(shì):\n? Higher safety margin against overvoltage and complements CoolMOS? offer\n? Improved efficiency over all load conditions\n? Increased efficiency compared to Silicon Diode alternatives\n? Reduced EMI compared to snappier Silicon diode reverse recovery waveform\n? Highly stable switching performance\n? Reduced cooling requirements\n? Reduced risks of thermal runaway\n? RoHS compliant\n? Very high quality and high volume manufacturing capability \n;

CoolSiC? generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).?\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDK04G65C5_13

Silicon Carbide Diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDK04G65C5XTMA1

Package:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB;包裝:散裝 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 650V 4A TO263-2

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDK04G65C5XTMA2

Package:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 650V 4A TO263-2

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

技術(shù)參數(shù)

  • Product Status:

    active and preferred

  • Technology:

    CoolSiC? G5

  • Qualification:

    Industrial

  • VDC min:

    650 V

  • IF max:

    4 A

  • VF:

    1.5 V

  • QC:

    7 nC

  • Package:

    D2PAK (TO-263-2)

  • I(FSM) max:

    38 A

  • IR:

    0.2 μA

  • CT:

    130 pF

  • Ptot max:

    48 W

  • RthJC:

    1.9 K/W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
7718
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。
詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
Infineon/英飛凌
2021+
PG-TO263-2
9600
原裝現(xiàn)貨,歡迎詢價(jià)
詢價(jià)
Infineon/英飛凌
24+
PG-TO263-2
25000
原裝正品,假一賠十!
詢價(jià)
Infineon/英飛凌
24+
PG-TO263-2
6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
詢價(jià)
Infineon/英飛凌
21+
PG-TO263-2
6820
只做原裝,質(zhì)量保證
詢價(jià)
Infineon/英飛凌
23+
PG-TO263-2
10000
原裝正品,支持實(shí)單
詢價(jià)
Infineon/英飛凌
23+
PG-TO263-2
25630
原裝正品
詢價(jià)
Infineon/英飛凌
25
PG-TO263-2
6000
原裝正品
詢價(jià)
Infineon/英飛凌
2023+
PG-TO263-2
6000
原裝正品現(xiàn)貨、支持第三方檢驗(yàn)、終端BOM表可配單提供
詢價(jià)
更多IDK04G65C5供應(yīng)商 更新時(shí)間2025-7-29 9:38:00