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IL614

PassiveInputDigitalIsolators

ETCList of Unclassifed Manufacturers

未分類制造商

IL614E

Passive-InputDigitalIsolators–CMOSOutputs

Features ?Upto100Mbpsdatarate ?Flexibleinputswithverywideinputvoltagerange ?5mAinputcurrent ?Failsafeoutput(logichighoutputforzerocoilcurrent) ?NocarrierorclockforlowEMIemissionsandsusceptibility ?Lowpowerdissipation ?3Vto5Vpowersupplies ?440

NVE

NVE Corporation

IPM-C614

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IPM-L614

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IRF614

2.0A,250V,2.0Ohm,N-ChannelPowerMOSFET

Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ThispowerMOSFETisdesignedforapplicationssuch

Intersil

Intersil Corporation

IRF614

EaseofParalleling

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF614

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF614

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF614A

N-ChannelMosfetTransistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?LowRDS(on) ?VGSRatedat±30V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF614B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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CCD14
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更多ICX614AQA-F供應(yīng)商 更新時(shí)間2025-7-27 14:14:00