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IC41LV16256-60KI中文資料ICSI數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號(hào) |
IC41LV16256-60KI |
| 功能描述 | 256Kx16 bit Dynamic RAM with EDO Page Mode |
| 文件大小 |
208.89 Kbytes |
| 頁面數(shù)量 |
21 頁 |
| 生產(chǎn)廠商 | ICSI |
| 中文名稱 | 矽成積體電路股份有限公司 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-8-18 17:01:00 |
| 人工找貨 | IC41LV16256-60KI價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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DESCRIPTION
The ICSI IC41C16256 and IC41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. The IC41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C16256 ideal for use in 16-, 32-bit wide data bus systems.
These features make the IC41C16256and IC41LV16256 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IC41C16256 is packaged in a 40-pin 400mil SOJ and 400mil TSOP-2.
FEATURES
? Extended Data-Out (EDO) Page Mode access cycle
? TTL compatible inputs and outputs; tristate I/O
? Refresh Interval: 512 cycles /8 ms
? Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden
? Single power supply:
5V ± 10 (IC41C16256)
3.3V ± 10 (IC41LV16256)
? Byte Write and Byte Read operation via two CAS
? Industrail Temperature Range -40oC to 85oC
? Pb-free package is available
