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IRF430

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF430

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF

International Rectifier

IRF430

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRF430

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF430

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF430

N-ChannelPowerMOSFETs,4.5A,450V/500V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF430

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFE430

HEXFETTRANSISTOR

500Volt,1.50?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpa

IRF

International Rectifier

IRFE430

SimpleDriveRequirements

IRF

International Rectifier

IRFF430

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    HV430WG

  • 功能描述：

    電話振鈴器 Hv Ring Gen

  • RoHS：

    否

  • 制造商：

    NJR

  • 產(chǎn)品：

    FSK Demodulator/Tone Decoder

  • 封裝/箱體：

    DIP-14

  • 頻率：

    0.01 Hz to 300 KHz

  • 最大工作溫度：

    + 85 C

  • 最小工作溫度：

    - 40 C

  • 封裝：

    Reel

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05+
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