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HUF76129D3S中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書

HUF76129D3S
廠商型號

HUF76129D3S

功能描述

20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

文件大小

107.05 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-20 13:43:00

人工找貨

HUF76129D3S價格和庫存,歡迎聯(lián)系客服免費人工找貨

HUF76129D3S規(guī)格書詳情

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

特性 Features

? Logic Level Gate Drive

? 20A, 30V

? Ultra Low On-Resistance, rDS(ON) = 0.016?

? Temperature Compensating PSPICE? Model

? Temperature Compensating SABER? Mode

? Thermal Impedance SPICE Model

? Thermal Impedance SABER Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    HUF76129D3S

  • 功能描述:

    MOSFET 20a 30V N-Ch Logic Level 0.016Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商 型號 品牌 批號 封裝 庫存 備注 價格
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一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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