This N-Channel power MOSFET is manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.

特性 Features

? Logic Level Gate Drive

? 5.5A, 30V

? Ultra Low On-Resistance, rDS(ON) = 0.050?

? Simulation Models

- Temperature Compensated PSPICE? and SABER Electrical Models

- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models.htm

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Transient Thermal Impedance Curve vs Board Mounting Area

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”