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首頁(yè)>HUF75639P3>規(guī)格書詳情

HUF75639P3中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書

HUF75639P3
廠商型號(hào)

HUF75639P3

功能描述

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

文件大小

370.04 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-21 8:49:00

人工找貨

HUF75639P3價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

HUF75639P3規(guī)格書詳情

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

特性 Features

? 56A, 100V

? Simulation Models

- Temperature Compensated PSPICETM and SABER?

Electrical Models

- Spice and Saber Thermal Impedance Models

- www.Intersil.com

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HUF75639P3

  • 功能描述:

    MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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