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IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFD9110

1-WATTRATEDPOWERMOSFETs

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

-0.6Aand-0.7A,-80Vand-100V,1.2and1.6Ohm,P-ChannelPowerMOSFETs

Description TheseareP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Features ?-0.6Aand-07A,-80Vand-100V ?rDS(ON)=

HARRIS

Harris Corporation

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-0.70A)

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110PBF

HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-0.70A)

IRF

International Rectifier

IRFD9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

技術(shù)參數(shù)

  • Inbuilt RC：

    4MHz±1.0%

  • ROM：

    2K

  • RAM：

    32

  • I/O：

    14

  • Keys：

    91(T-KEY)

  • Package：

    SOP16

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HS華芯
22+23+
SOP16
85192
代理全新原裝假一罰十
 詢(xún)價(jià)
HARRIS
23+
PLCC68
5000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
HARRIS
23+
PLCC68
5000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
INTERSIL
24+
NA
10021
只做原裝正品現(xiàn)貨 歡迎來(lái)電查詢(xún)15919825718
 詢(xún)價(jià)
ISL
06+
原廠原裝
4283
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
INTEL
24+
IC
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div>
 詢(xún)價(jià)
INTERSIL
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
INTERSIL
23+
SOP8
28000
原裝正品
 詢(xún)價(jià)
INTERSIL
23+
SOP8
12800
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢(xún)價(jià)
INTERSIL
24+
NA/
3252
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
 詢(xún)價(jià)
更多HS9110-T供應(yīng)商 更新時(shí)間2025-7-29 8:11:00

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