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首頁>HS9-4423RH-Q>規(guī)格書詳情

HS9-4423RH-Q中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書

HS9-4423RH-Q
廠商型號(hào)

HS9-4423RH-Q

功能描述

Radiation Hardened Dual, Inverting Power MOSFET Drivers

文件大小

201.96 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

INTERSIL

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
INTERSIL
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-4 17:42:00

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HS9-4423RH-Q規(guī)格書詳情

The Radiation Hardened HS-4423RH, HS-4423EH,

HS-4423BRH, HS-4423BEH are inverting, dual, monolithic

high-speed MOSFET drivers designed to convert TTL level

signals into high current outputs at voltages up to 18V.

The inputs of these devices are TTL compatible and can be

directly driven by our HS-1825ARH PWM device or by our

ACS/ACTS and HCS/HCTS type logic devices. The fast rise

times and high current outputs allow very quick control of high

gate capacitance power MOSFETs in high frequency

applications.

The high current outputs minimize power losses in MOSFETs by

rapidly charging and discharging the gate capacitance. The

output stage incorporates a low voltage lock-out circuit that

puts the outputs into a three-state mode when the supply

voltage drops below 10V for the HS-4423RH, HS-4423EH and

7.5V for the HS-4423BRH and HS-4423BEH.

Constructed with the Intersil dielectrically isolated Rad Hard

Silicon Gate (RSG) BiCMOS process, these devices are immune

to Single Event Latch-up and have been specifically designed

to provide highly reliable performance in harsh radiation

environments

特性 Features

? Electrically screened to DLA SMD # 5962-99511

? QML qualified per MIL-PRF-38535 requirements

? EH version acceptance tested to 50krad(Si) (LDR)

? Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Latch-up immune

- Low dose rate immune

? IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (typ)

? Matched rise and fall times (CL = 4300pF) . . . . . . . . 75ns (max)

? Low voltage lock-out feature

- HS-4423RH, HS-4423EH, . . . . . . . . . . . . . . . . . . . . . <10.0V

- HS-4423BRH, HS-4423BEH . . . . . . . . . . . . . . . . . . . . . <7.5V

? Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V

? Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (max)

? Consistent delay times with VCC changes

? Low power consumption

- 40mW with inputs high

- 20mW with inputs low

? Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)

? ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V

Applications

? Switching power supplies

? DC/DC converters

? Motor controllers

產(chǎn)品屬性

  • 型號(hào):

    HS9-4423RH-Q

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened Dual, Inverting Power MOSFET Drivers

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