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HP4936DY中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HP4936DY
廠(chǎng)商型號(hào)

HP4936DY

功能描述

5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

文件大小

84.3 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠(chǎng)商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-8-16 16:06:00

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HP4936DY規(guī)格書(shū)詳情

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

特性 Features

? Logic Level Gate Drive

? 5.8A, 30V

? rDS(ON) = 0.037? at ID = 5.8A, VGS = 10V

? rDS(ON) = 0.055? at ID = 4.7A, VGS = 4.5V

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    HP4936DY

  • 功能描述:

    MOSFET 30V 5.8a 0.037Ohm Dual N-Channel Logic

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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