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INA310B

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/°

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA310X

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15%,10ppm/°Cdrift ?VersionB:0.5%

TITexas Instruments

德州儀器美國(guó)德州儀器公司

INA310X

INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference

1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15%,10ppm/°Cdrift ?VersionB:0.5%

TITexas Instruments

德州儀器美國(guó)德州儀器公司

IRFD310

0.4A,400V,3.600Ohm,N-ChannelPowerMOSFET

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFD310

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310

PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A)

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD310PBF

HEXFET?PowerMOSFET

VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD310PBF

PowerMOSFET

VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE310

HEXFETTRANSISTOR

400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NA
專業(yè)模塊
MODULE
8513
模塊原裝主營(yíng)-可開原型號(hào)增稅票
詢價(jià)
LEM
2025+
SENSOR
271
原廠直銷,支持實(shí)單,保質(zhì)期5年
詢價(jià)
LEM/萊姆
24+
sensor
8600
正品原裝,正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
詢價(jià)
14+
400
普通
詢價(jià)
23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
BCT
25+
NA
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
HXY MOSFET(華軒陽(yáng)電子)
23+
SOP-8
101
900條運(yùn)算放大器 只做原裝現(xiàn)貨
詢價(jià)
24+
N/A
54000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
更多HO-P-310D供應(yīng)商 更新時(shí)間2025-7-27 14:14:00