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HMC559-Die

寬帶功率放大器芯片，DC - 20 GHz; ? P1dB輸出功率：+28 dBm \n? 增益：14 dB \n? 輸出IP3：+36 dBm \n? 電源電壓：+10V (400 mA)\n? 50 Ω匹配輸入/輸出 \n? 裸片尺寸： 3.12 x 1.50 x 0.1 mm\n;

HMC559是一款GaAs MMIC PHEMT分布式功率放大器裸片，在DC至20 GHz的頻率下工作。 該放大器提供14 dB增益、+36 dBm輸出IP3和+28 dBm輸出功率（1 dB增益壓縮），功耗為400 mA（采用+10V電源）。 在4至20 GHz范圍內(nèi)的良好增益平坦度使得HMC559非常適用于EW、ECM和雷達驅(qū)動放大器應用。 HMC559放大器I/O內(nèi)部匹配50 Ω阻抗，方便集成到多芯片模塊(MCM)。 所有數(shù)據(jù)均由通過最短0.31mm (12 mil)的兩條0.075mm (3 mil)線焊帶連接的芯片獲取。 \n\n

HN559

PNPSiliconEpitaxialPlanarTransistorforswitchingandAFapplications???

PNPSiliconEpitaxialPlanarTransistorforswitchingandAFapplications.

JC559

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaTO-92;SOT54plasticpackage. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.30V). APPLICATIONS ?Generalpurposeswitchingandamplification ?Low-noiseinputstagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PHI

K559

HIGHSPEEDPOWERSWITCHING

SILICONN-CHANNELMOSFET HIGHSPEEDPOWERSWITCHING

KRA559E

EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors ●SimplifyCircuitDesign ●ReduceaQuantityofPartsandManufacturingProcess ●HighPackingDensity.

KRA559U

EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors ●SimplifyCircuitDesign ●ReduceaQuantityofPartsandManufacturingProcess ●HighPackingDensity.

MC559

4wide3-2-2-3inputexpanderforand-or-invertgae

4WIDE3-2-2-3INPUTEXPANDERFORAND-OR-INVERTGATES

MIL-PRF-559

SurfaceMountQuadNPNTransistor

Description:The2N6989U(TX,TXV)isaherme?callysealed,ceramicsurface‐mountdevice,consis?ngof4siliconNPNtransistors.The20pinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsidera?ons. TypicalscreeninglotacceptancetestareperM

MRF559

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features ?Specified@12.5V,870MHzCharacteristics ?OutputPower=.5W ?MinimumGain=8.0dB ?Efficiency50 ?CostEffectiveMacroXPackage ?ElectrolessTinPlatedLeadsforImprovedSold

MRF559

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features ?Specified@12.5V,870MHzCharacteristics ?OutputPower=.5W ?MinimumGain=8.0dB ?Efficiency50 ?CostEffectiveMacroXPackage ?ElectrolessTinPlatedLeadsforImprovedSold