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IRFL9110PBF

HEXFET?PowerMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-1.1A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesold

IRF

International Rectifier

IRFL9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TRPBF

P-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFL9110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-3.1A)

DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec

IRF

International Rectifier

IRFR9110

3.1A,100V,1.200Ohm,P-ChannelPowerMOSFETs

TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110

DynamicdV/dtRating

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
24+
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價(jià)
2023+
DIP
3000
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
HMC
23+24
DIP
29850
原裝正品優(yōu)勢渠道價(jià)格合理.可開13%增值稅發(fā)票
 詢價(jià)
24+
DIP
475
詢價(jià)
HIT
23+
SOP
5000
原裝正品,假一罰十
 詢價(jià)
HMC
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
20+
DIP
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
HIT
23+
DIP-18P
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
 詢價(jià)
HIT
23+
DIP-18P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
HIT
91+
DIP-18P
42
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多HM9110A供應(yīng)商 更新時(shí)間2025-7-21 15:43:00

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