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HM628511HLJP-10中文資料日立數(shù)據(jù)手冊PDF規(guī)格書
HM628511HLJP-10規(guī)格書詳情
Description
The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.
Features
? Single 5.0 V supply : 5.0 V ± 10
? Access time 10 /12 /15 ns (max)
? Completely static memory
?- No clock or timing strobe required
? Equal access and cycle times
? Directly TTL compatible
?- All inputs and outputs
? Operating current : 180 / 160 / 140 mA (max)
? TTL standby current : 70 / 60 / 50 mA (max)
? CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version)
? Data retension current: 0.8 mA (max) (L-version)
? Data retension voltage: 2 V (min) (L-version)
? Center VCC and VSS type pinout
產(chǎn)品屬性
- 型號：
HM628511HLJP-10
- 制造商：
HITACHI
- 制造商全稱：
Hitachi Semiconductor
- 功能描述：
4M High Speed SRAM(512-kword x 8-bit)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
NA/ |
446 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
HIT |
23+ |
SOJ36 |
20000 |
全新原裝假一賠十 |
詢價 | ||
HITACHI |
11+ |
SOP-32 |
15 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
HIT |
01+ |
SOJ36 |
3560 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
HIT |
24+ |
SOJ |
4 |
詢價 | |||
HITACHI |
24+ |
SOJ-36 |
4650 |
詢價 | |||
NA |
24+ |
540 |
原裝現(xiàn)貨假一賠十 |
詢價 | |||
IC |
23+ |
DIP |
18500 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
N/A |
23+ |
80000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | |||
RAM |
23+ |
DIP/SOP |
5000 |
原裝正品,假一罰十 |
詢價 |
